HAT1097R Datasheet | Renesas

Features - Low on-resistance - Capable of 4.5 V gate drive .. - High density mounting - “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline RENESAS Package code: PRSP0008DD-A (Previous code: SOP-8 <FP-8DA>) 5 6 7 8 D D D D 5 7 6 4 G 3 1 2 4 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings HAT1097R HAT1097RJ Unit V V A A A m J W °C °C Drain to source voltage VDSS - 60 - 60 Gate to source voltage VGSS ±20 ±20 Drain current ID - 5 - 5 Note1 Drain peak current ID (pulse) - 40 - 40 Avalanche current IAPNote3 - - 5 Avalanche energy EARNote3 - 2.14 Channel dissipation Pch Note2 2 2 Channel temperature Tch 150 150 Storage temperature Tstg - 55 to +150 - 55 to +150 Notes: 1. PW ≤ 10µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s 3. Value at Tch = 25°C, Rg ≥ 50 Ω Rev.1.00, Feb.15.2005, page 1 of 7 HAT1097R, HAT1097RJ Electrical Characteristics Item Drain to source breakdown voltage Gate to Source breakdown voltage Zero gate voltage drain current HAT1097R Zero gate voltage drain current HAT1055RJ Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance .. Input capacitance Symbol V(BR)DSS V(BR)GSS IDSS IDSS IDSS IGSS VGS(off) |yfs| RDS(on) RDS(on) Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Min - 60 ±20 - - - - - 1.0 3 - -...