HAT1090C
HAT1090C is Silicon P-Channel Power MOSFET manufactured by Renesas.
Features
- Low on-resistance RDS(on) = 50 mΩ typ. (at VGS =
- 4.5 V) ..
- Low drive current.
- 2.5 V gate drive devices.
- High density mounting
Outline
RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2 3 4 5 DDD D
1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate
S 1
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body
- Drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board. (FR4 40 × 40 × 1.6mm), Ta = 25°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR Pch Note 2 Tch Tstg Ratings
- 20 ±12
- 2.5
- 10
- 2.5 900 150
- 55 to +150 Unit V V A A A m W °C °C
Rev.4.00, Jun. 13, 2005, page 1 of 6
Electrical Characteristics
(Ta = 25°C)
Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance .. Output capacitance Reverse transfer capacitance Total gate charge Gate to Source charge Gate to Drain charge Turn
- on delay time Rise time Turn
- off delay time Fall time Body
- Drain diode forward voltage Notes: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(th) RDS(on) | yfs | Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF Min.
- 20 ±12
- -
- 0.4
- - 3.5
- -
- -
- -
- -
- -
- Typ.
- -...
