HAT1095C Overview
HAT1095C Silicon P Channel MOS FET Power Switching.
HAT1095C Key Features
- Low on-resistance RDS(on) = 108 mΩ typ. (at VGS = -4.5 V)
- Low drive current
- 1.8 V gate drive devices
- High density mounting
Datasheet Details
| Part number | HAT1095C |
|---|---|
| Datasheet | HAT1095C_RenesasTechnology.pdf |
| File Size | 177.27 KB |
| Manufacturer | Renesas |
| Description | Silicon P-Channel Power MOSFET |
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