HAT1095C
HAT1095C is Silicon P-Channel Power MOSFET manufactured by Renesas.
Features
- Low on-resistance RDS(on) = 108 mΩ typ. (at VGS =
- 4.5 V)
- Low drive current.
- 1.8 V gate drive devices.
- High density mounting
Outline
RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6)
Indexband 5 4 6
3 2 1
Data Sheet
R07DS1174EJ0600 (Previous: REJ03G1232-0500)
Rev.6.00 Mar 19, 2014
2 34 5 D DD D
6 G
S 1
1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to Source voltage
VDSS
- 12
Gate to Source voltage
VGSS
±8
Drain current Drain peak current
- 2
ID(pulse)Note1
- 8
Body
- Drain diode reverse drain current
- 2
Channel dissipation
Pch Note 2
Channel...
