HAT1111C Datasheet, Renesas Technology

HAT1111C mosfet equivalent, silicon p-channel power mosfet.

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Features and benefits

* Low on-resistance RDS(on) = 245 mΩ typ. (at VGS =
–10 V) www.DataSheet4U.com
* Low drive current.
* 4.5 V gate drive devices.
* High den.

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