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HAT1111C Datasheet - Renesas Technology

Silicon P-Channel Power MOSFET

HAT1111C Features

* Low on-resistance RDS(on) = 245 mΩ typ. (at VGS =

* 10 V) www.DataSheet4U.com

* Low drive current.

* 4.5 V gate drive devices.

* High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) Index band 4 5 6 2 3 S 1 2 3 4 5 DDD

HAT1111C Datasheet (181.90 KB)

Preview of HAT1111C PDF

Datasheet Details

Part number:

HAT1111C

Manufacturer:

Renesas ↗ Technology

File Size:

181.90 KB

Description:

Silicon p-channel power mosfet.

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HAT1111C Silicon P-Channel Power MOSFET Renesas Technology

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