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Renesas Electronics Components Datasheet

HAT1126R Datasheet

Silicon P Channel Power MOS FET Power Switching

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HAT1126R pdf
HAT1126R, HAT1126RJ
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
Low on-resistance
Capable of 4.5 V gate drive
www.DataSheet4U.cHoimgh density mounting
“J” is for Automotive application
High temperature D-S leakage guarantee
Avalanche rating
Outline
SOP-8
78
DD
56
DD
24
GG
S1
MOS1
S3
MOS2
8 7 65
1 234
REJ03G0406-0100
Rev.1.00
Sep.10.2004
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
HAT1126R
HAT1126RJ
Drain to source voltage
Gate to source voltage
VDSS
VGSS
–60
±20
–60
±20
Drain current
Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
ID
ID (pulse)Note1
IAPNote4
EARNote4
PchNote2
PchNote3
–6.0
–48
2
3
–6.0
–48
–6.0
3.08
2
3
Channel temperature
Tch 150
150
Storage temperature
Tstg
–55 to +150
–55 to +150
Notes: 1. PW 10µs, duty cycle 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
4. Value at Tch = 25°C, Rg 50
(Ta = 25°C)
Unit
V
V
A
A
A
mJ
W
W
°C
°C
Rev.1.00 Sep. 10, 2004 page 1 of 7


Renesas Electronics Components Datasheet

HAT1126R Datasheet

Silicon P Channel Power MOS FET Power Switching

No Preview Available !

HAT1126R pdf
HAT1126R, HAT1126RJ
Electrical Characteristics
Item
Symbol
Drain to source breakdown
voltage
V(BR)DSS
Gate to Source breakdown voltage V(BR)GSS
Zero gate voltage drain current
IDSS
Zero gate voltage HAT1126R
drain current
HAT1126RJ
IDSS
IDSS
Gate to source leak current
IGSS
Gate to source cutoff voltage
VGS(off)
Forward transfer admittance
|yfs|
Static drain to source on state
www.DataSheet4U.com
resistance
RDS(on)
RDS(on)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate to source charge
Qgs
Gate to drain charge
Qgd
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Body-drain diode forward voltage
VDF
Body-drain diode reverse recovery
time
trr
Notes: 5. Pulse test
Min
–60
±20
–1.0
4.0
Typ
7.0
40
60
2300
230
140
37
6.5
8
20
15
55
10
–0.85
30
Max
–1
–10
±10
–2.5
50
85
–1.1
Unit
V
(Ta = 25°C)
Unit
ID = –10 mA, VGS = 0
V IG = ±100 µA, VDS = 0
µA VDS = –60 V, VGS = 0
µA VDS = –48 V, VGS = 0
µA Ta = 125°C
µA VGS = ±16 V, VDS = 0
V VDS = –10 V, ID = –1 mA
S ID = –3.0 ANote5, VDS = –10 V
mID = –3.0 ANote5, VGS = –10 V
mID = –3.0 ANote5, VGS = –4.5 V
pF VDS = –10 V, VGS = 0
pF f = 1 MHz
pF
nC VDD = –25 V
nC VGS = –10 V
nC ID = –6.0 A
ns VGS = –10 V, ID= –3.0 A
ns VDD –30 V
ns RL = 10
ns RG = 4.7
V IF = –6.0 A, VGS = 0Note5
ns
IF = –6.0 A, VGS = 0
diF/dt = 100 A / µs
Rev.1.00 Sep. 10, 2004, page 2 of 7


Part Number HAT1126R
Description Silicon P Channel Power MOS FET Power Switching
Maker Renesas Technology
Total Page 8 Pages
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HAT1126R pdf
HAT1126R Datasheet PDF
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