HAT1126R Datasheet | Renesas

Features - Low on-resistance - Capable of 4.5 V gate drive .. - High density mounting - “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline SOP-8 7 8 D D 5 6 D D 5 7 6 2 G 4 G 3 1 2 S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID ID (pulse)Note1 Ratings HAT1126R - 60 ±20 - 6.0 - 48 HAT1126RJ - 60 ±20 - 6.0 - 48 Unit V V A A A m J W W °C °C Avalanche current IAPNote4 - - 6.0 Note4 Avalanche energy EAR - 3.08 Channel dissipation Pch Note2 2 2 Channel dissipation Pch Note3 3 3 Channel temperature Tch 150 150 Storage temperature Tstg - 55 to +150 - 55 to +150 Notes: 1. PW ≤ 10µs, duty cycle ≤ 1% 2. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s 3. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s 4. Value at Tch = 25°C, Rg ≥ 50 Ω Rev.1.00 Sep. 10, 2004 page 1 of 7 HAT1126R, HAT1126RJ Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol V(BR)DSS Min - 60 ±20 - - - - - 1.0 4.0 - -...