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HAT1126R, HAT1126RJ
Silicon P Channel Power MOS FET High Speed Power Switching
REJ03G0406-0100 Rev.1.00 Sep.10.2004
Features
• Low on-resistance • Capable of 4.5 V gate drive www.DataSheet4U.com • High density mounting • “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating
Outline
SOP-8
7 8 D D 5 6 D D 5 7 6
2 G
4 G
8
3 1 2 S1 S3
4
1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain
MOS1
MOS2
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID ID (pulse)Note1 Ratings HAT1126R –60 ±20 –6.0 –48 HAT1126RJ –60 ±20 –6.0 –48 Unit V V A A A mJ W W °C °C
Avalanche current IAPNote4 — –6.0 Note4 Avalanche energy EAR — 3.
HAT1126R Datasheet
