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HAT1126RJ - Silicon P-Channel Power MOSFET

Download the HAT1126RJ datasheet PDF. This datasheet also covers the HAT1126R variant, as both devices belong to the same silicon p-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low on-resistance.
  • Capable of 4.5 V gate drive www. DataSheet4U. com.
  • High density mounting.
  • “J” is for Automotive.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HAT1126R_RenesasTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HAT1126RJ
Manufacturer Renesas
File Size 151.14 KB
Description Silicon P-Channel Power MOSFET
Datasheet download datasheet HAT1126RJ Datasheet

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Other Datasheets by Renesas

Part Number Description
HAT1126R Silicon P-Channel Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HAT1126R, HAT1126RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0406-0100 Rev.1.00 Sep.10.2004 Features • Low on-resistance • Capable of 4.5 V gate drive www.DataSheet4U.com • High density mounting • “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline SOP-8 7 8 D D 5 6 D D 5 7 6 2 G 4 G 8 3 1 2 S1 S3 4 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID ID (pulse)Note1 Ratings HAT1126R –60 ±20 –6.0 –48 HAT1126RJ –60 ±20 –6.0 –48 Unit V V A A A mJ W W °C °C Avalanche current IAPNote4 — –6.0 Note4 Avalanche energy EAR — 3.