HAT1127H Datasheet | Renesas

Features - Capable of - 4.5 V gate drive - Low drive current - High density mounting - Ultra Low on-resistance RDS(on) = 3.6 mΩ typ. (at VGS = - 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 4 G 1 234 5 D SSS 123 REJ03G1330-0500 Rev.5.00 Jan 20, 2006 1, 2, 3 4 5 Source Gate Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to Case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25°C Symbol VDSS VGSS ID ID(pulse)Note1 IDR Pch Note2 θch-c Note2 Tch Tstg Ratings - 30 - 20/+10 - 40 - 160 - 40 30 4.17 150 - 55 to +150 (Ta = 25°C) Unit V V A A A W °C/W °C °C Rev.5.00 Jan 20, 2006 page 1 of 6 Electrical Characteristics Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state...