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HAT1127H
Silicon P Channel Power MOS FET Power Switching
Features
• Capable of –4.5 V gate drive • Low drive current • High density mounting • Ultra Low on-resistance
RDS(on) = 3.6 mΩ typ. (at VGS = –10 V)
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 4 G
1 234
5 D
SSS 123
REJ03G1330-0500 Rev.5.00
Jan 20, 2006
1, 2, 3 4 5
Source Gate Drain
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to Case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25°C
Symbol
VDSS VGSS
ID ID(pulse)Note1
IDR Pch Note2 θch-c Note2
Tch
Tstg
Ratings –30
–20/+10 –40 –160 –40 30 4.
HAT1127H Datasheet
