HAT1139H
HAT1139H is Silicon P-Channel Power MOSFET manufactured by Renesas.
Features
- Capable of
- 4.5 V gate drive
- Low drive current
- High density mounting
- Low on-resistance
RDS(on) = 7.0 mΩ typ. (at VGS =
- 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
1 234
REJ03G1244-0200 Rev.2.00
Jun.22.2005
1, 4 Source 2, 3 Gate 5 Drain
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 1 Drive operation : Tc = 25°C 3. 2 Drive operation : Tc = 25°C
Symbol VDSS VGSS ID
ID(pulse)Note1 IDR
Pch Note2 Pch Note3
Tch Tstg
Ratings
- 30
- 25 / +20
- 30
- 120
- 30 15 30 150
- 55 to +150
(Ta = 25°C)
Unit V V A A A W W °C °C
Rev.2.00 Jun. 22, 2005, page 1 of 6
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body- drain diode forward voltage Body- drain diode reverse recovery time Notes: 4. Pulse...
