HAT1139H - Silicon P-Channel Power MOSFET

Renesas

Key Features

Capable of.
4.5 V gate drive.
Low drive current.
High density mounting.
Low on-resistance RDS(on) = 7.0 mΩ typ. (at VGS =.
10 V) Outline.

HAT1139H silicon p-channel power mosfet by Renesas - Datasheet Preview

Datasheet Details

Part number	HAT1139H
Manufacturer	Renesas
File Size	88.85 KB
Description	Silicon P-Channel Power MOSFET
Datasheet	HAT1139H Datasheet

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HAT1139H Silicon P Channel Power MOS FET Power Switching Features • Capable of –4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 7.0 mΩ typ. (at VGS = –10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 5 5 D D 1 234 2 3 G G S S 1 4 REJ03G1244-0200 Rev.2.00 Jun.22.2005 1, 4 Source 2, 3 Gate 5 Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 1 Drive operation : Tc = 25°C 3.