HAT2090R - Silicon N-Channel Power MOSFET

Renesas

Key Features

Low on-resistance.
Low drive current.
High density mounting Outline.

HAT2090R silicon n-channel power mosfet by Renesas - Datasheet Preview

Datasheet Details

Part number	HAT2090R
Manufacturer	Renesas
File Size	144.91 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	HAT2090R Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HAT2090R Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 8765 1234 4 G 5678 DDDD SSS 123 REJ03G1316-0100 (Previous: ADE-208-1474) Rev.1.00 Nov 08, 2005 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 350 Gate to source voltage VGSS ±30 Drain current Drain peak current ID 0.9 ID Note1 (pulse) 7.2 Body-drain diode reverse drain current IDR 0.9 Channel dissipation Pch Note2 2.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.