Datasheet4U Logo Datasheet4U.com

HAT2092R - Silicon N-Channel Power MOSFET

Key Features

  • Low on-resistance.
  • Capable of 4.5 V gate drive.
  • Low drive current.
  • High density mounting Outline SOP-8 8 7 65 1 234 78 DD 2 4 G G S1 MOS1 56 DD S3 MOS2 REJ03G0511-0300 (Previous ADE-208-1236A(Z)) Rev.3.00 Jan.13.2005 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 30 Gate to source voltage VGSS ±20 Drain current Drain peak current ID 11 ID(pulse)Note1 88 Body.

📥 Download Datasheet

Datasheet Details

Part number HAT2092R
Manufacturer Renesas
File Size 75.05 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HAT2092R Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HAT2096H Silicon N-Channel Power MOSFET Hitachi
HAT2096H Silicon N-Channel Power MOSFET Renesas
HAT200-S (HAT200-S - HAT1500-S) Current Transducer LEM
HAT2016R Silicon N-Channel Power MOSFET Hitachi Semiconductor
HAT2016R Silicon N-Channel Power MOSFET Renesas

Other Datasheets by Renesas

Part Number Description
HAT2090R Silicon N-Channel Power MOSFET
HAT2093R Silicon N-Channel Power MOSFET
HAT2099H Silicon N-Channel Power MOSFET
HAT2058R Silicon N-Channel Power MOSFET
HAT2070R Silicon N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HAT2092R Silicon N Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4.5 V gate drive • Low drive current • High density mounting Outline SOP-8 8 7 65 1 234 78 DD 2 4 G G S1 MOS1 56 DD S3 MOS2 REJ03G0511-0300 (Previous ADE-208-1236A(Z)) Rev.3.00 Jan.13.2005 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 30 Gate to source voltage VGSS ±20 Drain current Drain peak current ID 11 ID(pulse)Note1 88 Body–drain diode reverse drain current IDR 11 Channel dissipation Pch Note2 2 Channel dissipation Pch Note3 3 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.