• Part: HAT2119H
  • Description: Silicon N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Renesas
  • Size: 67.09 KB
Download HAT2119H Datasheet PDF
Renesas
HAT2119H
HAT2119H is Silicon N-Channel MOSFET manufactured by Renesas.
Features - Low drive current. - Low on-resistance - Low profile Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK ) 5 4 G 1 234 5 D S SS 1 23 REJ03G0176-0300 Rev.3.00 Dec 19, 2006 1, 2, 3 4 5 Source Gate Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID(pulse) Note1 IDR IDR(pulse) Note1 IAP Note3 EAR Note3 Pch Note2 θch-c Tch Tstg Ratings 250 ±30 5 20 5 20 5 1.5 20 6.25 150 - 55 to +150 (Ta = 25°C) Unit V V A A A A A m J W °C/W °C °C Rev.3.00 Dec 19, 2006 page 1 of 3 Electrical Characteristics Item Symbol Min Drain to source breakdown voltage V(BR)DSS Zero gate voltage drain current IDSS - Gate to source leak...