• Part: HAT2139H
  • Description: Silicon N-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: Renesas
  • Size: 79.28 KB
Download HAT2139H Datasheet PDF
Renesas
HAT2139H
HAT2139H is Silicon N-Channel Power MOSFET manufactured by Renesas.
Features - Capable of 7 V gate drive - Low drive current - High density mounting - Low on-resistance RDS(on) = 9 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 1 234 5 D 4 G SSS 123 REJ03G0055-0500 Rev.5.00 Sep 20, 2005 1, 2, 3 Source Gate Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 3 EAR Note 3 Pch Note2 Tch Tstg Ratings 40 ±20 20 80 20 10 8 15 150 - 55 to +150 (Ta = 25°C) Unit V V A A A A m J W °C °C Rev.5.00 Sep 20, 2005 page 1 of 7 Electrical Characteristics Item Symbol Min Drain to source breakdown voltage V(BR)DSS 40 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak...