HAT2139H
HAT2139H is Silicon N-Channel Power MOSFET manufactured by Renesas.
Features
- Capable of 7 V gate drive
- Low drive current
- High density mounting
- Low on-resistance
RDS(on) = 9 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK )
1 234
5 D
4 G
SSS 123
REJ03G0055-0500 Rev.5.00
Sep 20, 2005
1, 2, 3 Source
Gate
Drain
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
VDSS VGSS
ID ID(pulse)Note1
IDR IAP Note 3 EAR Note 3 Pch Note2
Tch
Tstg
Ratings 40 ±20 20 80 20 10 8 15 150
- 55 to +150
(Ta = 25°C)
Unit V V A A A A m J W °C °C
Rev.5.00 Sep 20, 2005 page 1 of 7
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS 40
Gate to source breakdown voltage V(BR)GSS ±20
Gate to source leak...