HAT2165N - Silicon N-Channel Power MOSFET

Renesas

Key Features

High speed switching.
Capable of 4.5 V gate drive.
Low drive current.
High density mounting.
Low on-resistance RDS(on) = 2.8 mΩ typ. (at VGS = 10 V) Outline.

HAT2165N silicon n-channel power mosfet by Renesas - Datasheet Preview

Datasheet Details

Part number	HAT2165N
Manufacturer	Renesas
File Size	120.55 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	HAT2165N Datasheet

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HAT2165N Silicon N Channel Power MOS FET Power Switching Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 2.8 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTSP0008DC-A (Package name: LFPAK-i) 1(S) 2XXX 2(S) 3(S) 8(D) 4(G) 7(D) 4 6(D) G 5(D) 5678 DDDD SSS 12 3 REJ03G1680-0300 Rev.3.00 May 27, 2008 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.