• Part: HAT2191WP
  • Description: Silicon N-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: Renesas
  • Size: 40.19 KB
Download HAT2191WP Datasheet PDF
Renesas
HAT2191WP
HAT2191WP is Silicon N-Channel Power MOSFET manufactured by Renesas.
Features - Low on-resistance - Low drive current - High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 D DDD 5 678 4 G 4 32 1 S SS 1 23 REJ03G1223-0500 Rev.5.00 Jun.02.2005 1, 2, 3 Source Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS Note1 (pulse) Note1 (pulse) IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 250 ±30 14 28 14 28 7 3.0 30 4.17 150 - 55 to +150 (Ta = 25°C) Unit V V A A A A A m J W °C/W °C °C Rev.5.00, Jun.02.2005, page 1 of...