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HAT2195R Datasheet Silicon N-Channel Power MOSFET

Manufacturer: Renesas

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Overview

www.DataSheet4U.com HAT2195R Silicon N Channel Power MOS FET Power Switching REJ03G0060-0300Z Rev.3.00 Apr.01.

Key Features

  • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.6 mΩ typ. (at VGS = 10 V) Outline SOP-8 5 6 7 8 D D D D 5 7 6 8 4 G 3 1 2 4 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Cha.

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