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HAT2198R Datasheet Silicon N-Channel Power MOSFET

Manufacturer: Renesas

Overview

HAT2198R Silicon N Channel Power MOS FET Power Switching.

Key Features

  • High speed switching.
  • Capable of 4.5 V gate drive.
  • Low drive current.
  • High density mounting.
  • Low on-resistance RDS(on) = 7.2 mΩ typ. (at VGS = 10 V) Outline SOP-8 5 678 D DDD 4 G SS S 12 3 8 7 65 1 234 REJ03G0062-020 Rev.2.0 6HS. 8.20 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 30 Gate to source voltage VGSS ±20 Drain current Drain peak current ID ID(pulse).