HAT2196C Datasheet | Renesas

Features - Low on-resistance RDS(on) = 45 mΩ typ. (at VGS = 4.5 V) .. - Low drive current. - High density mounting - 2.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2 3 4 5 DDD D 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate S 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current ID Drain peak current ID (pulse)Note1 Body - Drain diode reverse drain current IDR Channel dissipation Pch Note 2 Channel temperature Tch Storage temperature Tstg Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board. (FR4 40 × 40 × 1.6 mm) Ratings 20 ±12 2.5 10 2.5 850 150 - 55 to +150 Unit V V A A A m W °C °C Rev.5.00, Jun. 13, 2005, page 1 of 6 Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance .. Output capacitance Reverse transfer capacitance Total gate charge Gate to Source charge Gate to Drain charge Turn - on delay time Rise time Turn - off delay time Fall time Body - Drain diode forward voltage Notes: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) | yfs | Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF Min 20 ±12 - - 0.4 - - 4.5 - - - - - - - - - - - Typ - - - - - 45 66 7 270 85 35 2.8 0.6 0.5 8 19 20 5 0.8 Max - - ±10 1 1.4 58 93 - - - - - - - -...