Datasheet Summary
Silicon N Channel Power MOS FET Power Switching
Features
- High speed switching
- Capable of 4.5 V gate drive
- Low drive current
- High density mounting
- Low on-resistance
RDS(on) = 7.2 mΩ typ. (at VGS = 10 V)
Outline
SOP-8
5 678 D DDD
4 G
SS S 12 3
8 7 65 1 234
REJ03G0062-020 Rev.2.0
6HS.8.20
1, 2, 3 Source
Gate
5, 6, 7, 8...