• Part: HAT2199R
  • Description: Silicon N-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: Renesas
  • Size: 104.26 KB
Download HAT2199R Datasheet PDF
Renesas
HAT2199R
HAT2199R is Silicon N-Channel Power MOSFET manufactured by Renesas.
Features - High speed switching - Capable of 4.5 V gate drive - Low drive current - High density mounting - Low on-resistance RDS(on) = 13.0 mΩ typ. (at VGS = 10 V) Outline SOP-8 8 7 65 1 234 56 7 8 DD D D SSS 12 3 1, 2, 3 Source Gate 5, 6, 7, 8 Drain REJ03G0063-0300 Rev.3.00 Sep.23.2004 Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS Gate to source voltage VGSS ±20 Drain current Drain peak current ID(pulse)Note1 Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance IDR IAP Note 2 EAR Note 2 Pch Note3 θch-a Note3 11 11 12.1 2.0 62.5 Channel temperature Tch...