HAT2199R
HAT2199R is Silicon N-Channel Power MOSFET manufactured by Renesas.
Features
- High speed switching
- Capable of 4.5 V gate drive
- Low drive current
- High density mounting
- Low on-resistance
RDS(on) = 13.0 mΩ typ. (at VGS = 10 V)
Outline
SOP-8
8 7 65
1 234
56 7 8 DD D D
SSS 12 3
1, 2, 3 Source
Gate
5, 6, 7, 8 Drain
REJ03G0063-0300 Rev.3.00
Sep.23.2004
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
Gate to source voltage
VGSS
±20
Drain current Drain peak current
ID(pulse)Note1
Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance
IDR IAP Note 2 EAR Note 2 Pch Note3 θch-a Note3
11 11 12.1 2.0 62.5
Channel temperature
Tch...