silicon n-channel power mosfet.
* Low on-resistance RDS(on) = 31 mΩ typ. (at VGS = 4.5 V)
* Low drive current.
* High density mounting
* 2.5 V gate drive devices.
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RENESAS Packag.
such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the .
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