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HAT2202C Datasheet

Silicon N Channel Power MOS FET Power Switching

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HAT2202C
Silicon N Channel MOS FET
Power Switching
Features
Low on-resistance
RDS(on) = 31 mΩ typ. (at VGS = 4.5 V)
Low drive current.
High density mounting
2.5 V gate drive devices.
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK-6)
Indexband
6
5
4
3
2
1
www.DataSheet4U.com
REJ03G1236-0600
Rev.6.00
Oct 01, 2009
23 45
DD DD
6
G
S
1
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID (pulse)Note1
Body - Drain diode reverse drain current
Channel dissipation
IDR
PchNote 2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 μs, duty cycle 1%
2. When using the glass epoxy board. (FR4 40 × 40 × 1.6 mm)
Ratings
20
±12
3
12
3
900
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
mW
°C
°C
REJ03G1236-0600 Rev.6.00 Oct 01, 2009
Page 1 of 6


Renesas Electronics Components Datasheet

HAT2202C Datasheet

Silicon N Channel Power MOS FET Power Switching

No Preview Available !

HAT2202C
Electrical Characteristics
www.DataSheet4U.com
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test Conditions
Drain to Source breakdown voltage V(BR)DSS
20
V ID = 10 mA, VGS = 0
Gate to Source breakdown voltage V(BR)GSS ±12
V IG = ±100 μA, VDS = 0
Gate to Source leakage current
IGSS
±10 μA VGS = ± 10V, VDS = 0
Drain to Source leakage current
IDSS
1
μA VDS = 20 V, VGS = 0
Gate to Source cutoff voltage
VGS(th)
0.4
1.4
V ID = 10 V, ID = 1 mA
Drain to Source on state resistance RDS(on)
31
40 mΩ ID = 1.5 A, VGS =4.5 V Note3
— 43 55 mΩ ID = 1.5 A, VGS = 2.5 V Note3
Forward transfer admittance
|yfs| 6.5 9.5
S ID = 1.5 A, VDS = 10 V Note3
Input capacitance
Output capacitance
Ciss — 520 —
Coss
115
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
Reverse transfer capacitance
Crss
60
pF
Total gate charge
Gate to Source charge
Qg — 6 — nC VDD = 10 V, VGS = 4.5 V,
Qgs — 1 — nC ID = 3 A
Gate to Drain charge
Qgd — 1.4 — nC
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Body - Drain diode forward voltage
Notes: 3. Pulse test
td(on)
tr
td(off)
tf
VDF
9—
8—
28 —
6—
0.8 1.1
ns ID = 1.5 A,
ns VGS = 10 V, VDD =10 V,
ns RL= 6.7 Ω, Rg = 4.7 Ω
ns
V IF = 3 A, VGS = 0 Note3
REJ03G1236-0600 Rev.6.00 Oct 01, 2009
Page 2 of 6


Part Number HAT2202C
Description Silicon N Channel Power MOS FET Power Switching
Maker Renesas Technology
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