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HAT2201R Datasheet Silicon N-channel Power MOSFET

Manufacturer: Renesas

Overview: HAT2201R Silicon N Channel Power MOS FET Power Switching.

Key Features

  • Capable of 8 V gate drive.
  • Low drive current.
  • High density mounting.
  • Low on-resistance RDS(on) = 34 mΩ typ. (at VGS = 10 V) Outline SOP-8 8 7 65 56 7 8 DD D D 1 234 4 G SSS 12 3 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain REJ03G0233-0301Z Rev.3.01 Nov.30.2016 Rev.3.01, Nov.30.2016, page 1 of 7 HAT2201R Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 100 Gate to source voltage VGSS ±20 Drain current Drain peak current.

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