HAT2204C
HAT2204C is Silicon N-Channel Power MOSFET manufactured by Renesas.
Features
- Low on-resistance RDS(on) = 26m Ω typ.(at VGS = 4.5 V)
- Low drive current
- High density mounting
- 1.8 V gate drive device
Outline
RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK
- 6) Index band 4 5 6 2 3
2 3 4 5 DDD D 6 G 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate S 1
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body
- Drain diode reverse Drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR Pch Note2 Tch Tstg
Note1
Ratings 12 ±8 3.5 14 3.5 900 150
- 55 to +150
Unit V V A A A m W °C °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm)
REJ03G0448-0500 Rev.5.00 May 10, 2007 Page 1 of 7
Electrical Characteristics
(Ta = 25°C)
Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) RDS(on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn
- on delay time Rise time Turn
- off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body
- Drain diode forward voltage Notes: 3. Pulse test |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF Min 12 ±8
- - 0.3
- -
- 8.5
- -
- -
- -
- -
- -
- Typ
- -
- - 26 34 45 13 770 115 50 10 9.5 36 5 9 1.5 2 0.8 Max
- ±10 1 1.2 34 44 69
- -
- -...
