• Part: HAT2207C
  • Description: Silicon N-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: Renesas
  • Size: 73.31 KB
Download HAT2207C Datasheet PDF
Renesas
HAT2207C
Features - Low on-resistance RDS(on) = 100 mΩ typ. (at VGS = 4.5 V) - Low drive current. - High density mounting - 2.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 3 2 1 REJ03G1239-0600 Rev.6.00 Feb 28, 2006 23 45 DD DD 6 G S 1 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID (pulse)Note1 Body - Drain diode reverse drain current Channel dissipation IDR Pch Note 2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board. (FR4 40 ʷ 40 ʷ 1.6 mm) Ratings 20 ±12 1.5 6 1.5 790 150 - 55 to +150 (Ta = 25°C) Unit V V A A A m W °C °C Rev.6.00 Feb 28, 2006 page 1 of...