Datasheet4U Logo Datasheet4U.com

HAT2208R - Silicon N-Channel Power MOSFET

Features

  • High speed switching.
  • Capable of 4.5 V gate drive.
  • Low drive current.
  • High density mounting.
  • Low on-resistance RDS(on) = 19.0 mΩ typ. (at VGS = 10 V) Outline.

📥 Download Datasheet

Datasheet preview – HAT2208R

Datasheet Details

Part number HAT2208R
Manufacturer Renesas Technology
File Size 229.95 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HAT2208R Datasheet
Additional preview pages of the HAT2208R datasheet.

📁 Similar Datasheet

  • HAT2201RJ - N-Channel 100V MOSFET (VBsemi)
  • HAT200-S - (HAT200-S - HAT1500-S) Current Transducer (LEM)
  • HAT2016R - Silicon N-Channel Power MOSFET (Hitachi Semiconductor)
  • HAT2016R - Silicon N-Channel Power MOSFET (Renesas)
  • HAT2016R - Dual N-Channel 30V MOSFET (VBsemi)
  • HAT2019R - Silicon N-Channel Power MOSFET (Hitachi Semiconductor)
  • HAT2020R - Silicon N-Channel Power MOSFET (Hitachi Semiconductor)
  • HAT2020R - Silicon N-Channel Power MOSFET (Renesas)
  • HAT2022R - Silicon N-Channel Power MOSFET (Hitachi Semiconductor)
  • HAT2022R - Silicon N-Channel Power MOSFET (Renesas)
Other Datasheets by Renesas Technology
  • HAT2200R - Silicon N-Channel Power MOSFET
  • HAT2200WP - Silicon N-Channel Power MOSFET
  • HAT2201R - Silicon N-Channel Power MOSFET
  • HAT2201WP - Silicon N-Channel Power MOSFET
  • HAT2202C - Silicon N-Channel Power MOSFET
  • HAT2203C - Silicon N-Channel Power MOSFET
  • HAT2204C - Silicon N-Channel Power MOSFET
  • HAT2205C - Silicon N-Channel Power MOSFET

Full PDF Text Transcription

Click to expand full text
HAT2208R Silicon N Channel Power MOS FET Power Switching Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 19.0 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 8765 1234 4 G 5678 DDDD SSS 123 REJ03G1595-0201 Rev.2.01 Nov.25.2016 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance VDSS VGSS ID ID(pulse) Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 θch-a Note3 30 ±20 9 72 9 9 8.1 2.0 62.
Published: |