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Renesas Electronics Components Datasheet

HAT2208R Datasheet

Silicon N Channel Power MOS FET Power Switching

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HAT2208R
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 19.0 mtyp. (at VGS = 10 V)
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
8765
1234
4
G
5678
DDDD
SSS
123
www.DataSheet4U.com
REJ03G1595-0200
Rev.2.00
Oct 15, 2007
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
30
Gate to source voltage
VGSS
±20
Drain current
Drain peak current
ID
ID(pulse) Note1
9
72
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to ambient thermal impedance
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-a Note3
9
9
8.1
2.0
62.5
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tch = 25°C, Rg 50
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1595-0200 Rev.2.00 Oct 15, 2007
Page 1 of 7


Renesas Electronics Components Datasheet

HAT2208R Datasheet

Silicon N Channel Power MOS FET Power Switching

No Preview Available !

HAT2208R
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
30
1.0
9.5
Typ
19
24
16
630
160
56
1.1
4.4
2.2
1.4
5.8
15
34
3.5
0.84
18
Max
±0.1
1
2.5
24
35
1.10
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Unit
V
µA
µA
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 4.5 A, VGS = 10 V Note4
ID = 4.5 A, VGS = 4.5 V Note4
ID = 4.5 A, VDS = 10 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 4.5 V
ID = 9 A
VGS = 10 V, ID = 4.5 A
VDD 10 V
RL = 2.22
Rg = 4.7
IF = 9 A, VGS = 0 Note4
IF = 9 A, VGS = 0
diF/ dt = 100 A/ µs
REJ03G1595-0200 Rev.2.00 Oct 15, 2007
Page 2 of 7


Part Number HAT2208R
Description Silicon N Channel Power MOS FET Power Switching
Maker Renesas Technology
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