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Renesas Electronics Components Datasheet

HAT2221C Datasheet

Silicon N Channel Power MOS FET Power Switching

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HAT2221C
Silicon N Channel MOS FET
Power Switching
Features
Low on-resistance
RDS(on) = 120 mtyp. (at VGS = 10 V)
Low drive current.
High density mounting
4.5 V gate drive devices.
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK-6)
Indexband
6
5
4
3
2
1
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REJ03G1240-0400
Rev.4.00
Feb 28, 2006
23 45
DD DD
6
G
S
1
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID (pulse)Note1
Body - Drain diode reverse drain current
Channel dissipation
IDR
PchNote 2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 µs, duty cycle 1%
2. When using the glass epoxy board. (FR4 40 × 40 × 1.6 mm)
Ratings
30
+20 / –10
1.5
6
1.5
790
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Rev.4.00 Feb 28, 2006 page 1 of 6


Renesas Electronics Components Datasheet

HAT2221C Datasheet

Silicon N Channel Power MOS FET Power Switching

No Preview Available !

HAT2221C
Electrical Characteristics
Item
Drain to Source breakdown voltage
Gate to Source breakdown voltage
Gate to Source leakage current
Drain to Source leakage current
Gate to Source cutoff voltage
Drain to Source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to Source charge
Gate to Drain charge
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Body - Drain diode forward voltage
Notes: 3. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
Min.
30
+20
–10
0.4
1.3
Typ.
120
160
2
110
27
13
2.8
0.6
0.5
8
6
40
3
0.8
Max.
±10
1
1.4
150
235
1.1
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Unit
V
V
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
IG = ±10 µA, VDS = 0
µA VGS = +16 / –8 V, VDS = 0
µA VDS = 30 V, VGS = 0
V VDS = 10 V, ID = 1 mA
mID = 0.8 A, VGS = 10 V Note3
mID = 0.8 A, VGS = 4.5 V Note3
S ID = 0.8 A, VDS = 10 V Note3
pF VDS = 10 V, VGS = 0,
pF f = 1MHz
PF
nC VDD = 10 V, VGS = 10 V,
nC ID = 1.5 A
nC
ns ID = 0.8 A, VGS = 10 V,
ns VDD = 10 V, RL = 12.5 ,
ns Rg = 4.7
ns
V IF = 1.5 A, VGS = 0 Note3
Rev.4.00 Feb 28, 2006 page 2 of 6


Part Number HAT2221C
Description Silicon N Channel Power MOS FET Power Switching
Maker Renesas Technology
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