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HAT2221C - Silicon N-Channel Power MOSFET

Features

  • Low on-resistance RDS(on) = 120 mΩ typ. (at VGS = 10 V).
  • Low drive current.
  • High density mounting.
  • 4.5 V gate drive devices. Outline.

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Datasheet Details

Part number HAT2221C
Manufacturer Renesas Technology
File Size 72.52 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HAT2221C Datasheet
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Full PDF Text Transcription

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HAT2221C Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 120 mΩ typ. (at VGS = 10 V) • Low drive current. • High density mounting • 4.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 3 2 1 REJ03G1240-0400 Rev.4.00 Feb 28, 2006 23 45 DD DD 6 G S 1 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID (pulse)Note1 Body - Drain diode reverse drain current Channel dissipation IDR PchNote 2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board. (FR4 40 × 40 × 1.
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