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HN29V1G91T-30 - 128M X 8-bit AG-AND Flash Memory

Description

The HN29V1G91 series achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's previous multi level cell Flash memory, using 0.13µm process technology and AG-AND (Assist GateAND) type Flash memory cell using multi level cell technology provides both the most cost effective solu

Features

  • On-board single power supply: VCC = 2.7 V to 3.6 V.
  • Operation Temperature range: Ta = 0 to +70°C.
  • Memory organization  Memory array: (2048+64) bytes × 16384 page × 4 Bank  Page size: (2048+64) bytes  Block size: (2048+64) bytes × 2 page  Page Register: (2048+64) bytes × 4 Bank.
  • Multi level memory cell  2bit/cell.
  • Automatic program  Page program  Multi bank program  Cache program  2 page cache program.
  • Automatic Erase  Block Erase .

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HN29V1G91T-30 128M × 8-bit AG-AND Flash Memory REJ03C0056-0400Z Rev. 4.00 Jul.20.2004 Description The HN29V1G91 series achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's previous multi level cell Flash memory, using 0.13µm process technology and AG-AND (Assist GateAND) type Flash memory cell using multi level cell technology provides both the most cost effective solution and high speed programming. Features • On-board single power supply: VCC = 2.7 V to 3.
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