Datasheet Summary
128M × 8-bit AG-AND Flash Memory
REJ03C0056-0400Z Rev. 4.00 Jul.20.2004
Description
The HN29V1G91 series achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's previous multi level cell Flash memory, using 0.13µm process technology and AG-AND (Assist GateAND) type Flash memory cell using multi level cell technology provides both the most cost effective solution and high speed programming.
Features
- On-board single power supply: VCC = 2.7 V to 3.6 V
- Operation Temperature range: Ta = 0 to +70°C
- Memory organization Memory array: (2048+64) bytes × 16384 page × 4 Bank Page size: (2048+64) bytes Block size: (2048+64) bytes × 2 page Page...