HN29V2G74WT-30 Overview
The HN29V2G74 is a 2G-bit AG-AND flash memory. It mounts two 1G-bit AG-AND flash memories with multi-level memory cells, which are programmable and erasable automatically with a single 3.0 V power supply. It achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's previous multi level cell Flash memory, using 0.13µm process technology and AG-AND (Assist Gate-AND) type Flash memory cell using...
HN29V2G74WT-30 Key Features
- On-board single power supply: VCC = 2.7 V to 3.6 V
- Operation Temperature range: Ta = 0 to +70°C
- Multi level memory cell 2bit/cell
- Automatic program Page program Multi bank program Cache program 2 page cache program
- Automatic Erase Block Erase Multi Bank Block Erase
- Access time Memory array to register (1st access time): 120 µs max Serial access: 35 ns min
- Program time: 600 µs (typ) (Single/Multi bank) transfer rate: 10 MB/s (Multi bank)
- Erase time: 650 µs (typ) (Single/Multi bank)
- The following architecture is required for data reliability Error correction: 3 bit error correction per 512byte are r