Description
The HN29V1G91 series achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's previous multi level cell Flash memory, using 0.13µm process technology and AG-AND (Assist GateAND) type Flash memory cell using multi level cell technology provides both the most cost effective solu
Features
- On-board single power supply: VCC = 2.7 V to 3.6 V.
- Operation Temperature range: Ta = 0 to +70°C.
- Memory organization Memory array: (2048+64) bytes × 16384 page × 4 Bank Page size: (2048+64) bytes Block size: (2048+64) bytes × 2 page Page Register: (2048+64) bytes × 4 Bank.
- Multi level memory cell 2bit/cell.
- Automatic program Page program Multi bank program Cache program 2 page cache program.
- Automatic Erase Block Erase .
HN29V1G91T-30 Datasheet
