HN29V1G91T-30 Overview
The HN29V1G91 series achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's previous multi level cell Flash memory, using 0.13µm process technology and AG-AND (Assist GateAND) type Flash memory cell using multi level cell technology provides both the most cost effective solution and high speed programming.
HN29V1G91T-30 Key Features
- On-board single power supply: VCC = 2.7 V to 3.6 V
- Operation Temperature range: Ta = 0 to +70°C
- Multi level memory cell 2bit/cell
- Automatic program Page program Multi bank program Cache program 2 page cache program
- Automatic Erase Block Erase Multi Bank Block Erase
- Access time Memory array to register (1st access time): 120 µs max Serial access: 35 ns min
- Program time: 600 µs (typ) (Single/Multi bank) transfer rate: 10 MB/s (Multi bank)
- Erase time: 650 µs (typ) (Single/Multi bank)
- The following architecture is required for data reliability Error correction: 3 bit error correction per 512byte are r
- Program/Erase Endurance: 105 cycles