HVL147 - Silicon Epitaxial Trench Pin Diode

Renesas Technology

Datasheet Details

Part number	HVL147
Manufacturer	Renesas Technology
File Size	218.58 KB
Description	Silicon Epitaxial Trench Pin Diode
Datasheet	HVL147_RenesasTechnology.pdf

Adopting the trench structure improves low capacitance. (C = 0.31 pF max) Low forward resistance. (rf = 1.5 Ω max) Low operation current. Extremely small Flat Package (EFP) is suitable for surface mount design. Ordering Information Type No. HVL147 Laser Mark N Package Code EFP Pin Arrangement Cathode mark Mark 1 N 2 1. Cathode 2. Anode Rev.2.00 Oct 20, 2004 page 1 of 4 DataSheet 4 U . com www. DataSheet4U. com HVL147 Absolute Maximum Ratings.

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Published: Oct 13, 2006 |