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HVL147 Datasheet

Silicon Epitaxial Trench Pin Diode for Antenna Switching

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HVL147
Silicon Epitaxial Trench Pin Diode for Antenna Switching
REJ03G0393-0200
Rev.2.00
Oct 20, 2004
Features
Adopting the trench structure improves low capacitance. (C = 0.31 pF max)
Low forward resistance. (rf = 1.5 max)
Low operation current.
Extremely small Flat Package (EFP) is suitable for surface mount design.
Ordering Information
Type No.
HVL147
Laser Mark
N
Package Code
EFP
Pin Arrangement
Cathode mark
Mark
12
1. Cathode
2. Anode
Rev.2.00 Oct 20, 2004 page 1 of 4
DataSheet4 U .com


Renesas Electronics Components Datasheet

HVL147 Datasheet

Silicon Epitaxial Trench Pin Diode for Antenna Switching

No Preview Available !

www.DataSheet4U.com
HVL147
Absolute Maximum Ratings
Item
Reverse voltage
Forward current
Power dissipation
Junction temperature
Storage temperature
VR
IF
Pd
Tj
Tstg
Symbol
Value
30
100
100
125
55 to +125
(Ta = 25°C)
Unit
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test Condition
Reverse current
IR
— — 100 nA VR = 30 V
Forward voltage
VF
— — 1.00 V IF = 10 mA
Capacitance
C
0.31
pF VR = 1 V, f = 1 MHz
Forward resistance
rf
— 2.5 — IF = 2 mA, f = 100 MHz
ESD-Capability *1
— — 1.5
IF = 10 mA, f = 100 MHz
100 — — V C = 200 pF, R = 0 , Both forward and
reverse direction 1 pulse.
Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V
2. Please do not use the soldering iron due to avoid high stress to the EFP package.
3. The material of lead is exposed for cutting plane. There for, soldering nature of lead tip part is considered as
unquestioned. Please kindly consider soldering nature.
Rev.2.00 Oct 20, 2004 page 2 of 4
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Part Number HVL147
Description Silicon Epitaxial Trench Pin Diode for Antenna Switching
Maker Renesas Technology
Total Page 5 Pages
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