HVL147M - Silicon Epitaxial Trench Pin Diode

Features

Adopting the trench structure improves low capacitance. (C = 0.31 pF max) Low forward resistance. (rf = 1.5 Ω max) Low operation current. Thin Extremely small Flat Lead Package (TEFP) is suitable for surface mount design. Ordering Information Type No. HVL147M Laser Mark N Package Name TEFP Package Code PUSF0002ZA-A Pin Arrangement Cathode mark Mark www. DataSheet4U. com 1.
N 2 1. Cathode 2. Anode Rev.3.00 Jan 20, 2006 page 1 of 4 HVL147M Abs.

Renesas Technology

Datasheet Details

Part number	HVL147M
Manufacturer	Renesas Technology
File Size	181.05 KB
Description	Silicon Epitaxial Trench Pin Diode
Datasheet	HVL147M Datasheet
Additional preview pages of the HVL147M datasheet.

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Full PDF Text Transcription

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HVL147M Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0394-0300 Rev.3.00 Jan 20, 2006 Features • • • • Adopting the trench structure improves low capacitance.(C = 0.31 pF max) Low forward resistance. (rf = 1.5 Ω max) Low operation current. Thin Extremely small Flat Lead Package (TEFP) is suitable for surface mount design. Ordering Information Type No. HVL147M Laser Mark N Package Name TEFP Package Code PUSF0002ZA-A Pin Arrangement Cathode mark Mark www.DataSheet4U.com 1 • N 2 1. Cathode 2. Anode Rev.3.

Published: Jul 22, 2007 |