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HVL147 - Silicon Epitaxial Trench Pin Diode

Features

  • Adopting the trench structure improves low capacitance. (C = 0.31 pF max) Low forward resistance. (rf = 1.5 Ω max) Low operation current. Extremely small Flat Package (EFP) is suitable for surface mount design. Ordering Information Type No. HVL147 Laser Mark N Package Code EFP Pin Arrangement Cathode mark Mark 1 N 2 1. Cathode 2. Anode Rev.2.00 Oct 20, 2004 page 1 of 4 DataSheet 4 U . com www. DataSheet4U. com HVL147 Absolute Maximum Ratings.

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Datasheet Details

Part number HVL147
Manufacturer Renesas Technology
File Size 218.58 KB
Description Silicon Epitaxial Trench Pin Diode
Datasheet download datasheet HVL147 Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com HVL147 Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G0393-0200 Rev.2.00 Oct 20, 2004 Features • • • • • Adopting the trench structure improves low capacitance. (C = 0.31 pF max) Low forward resistance. (rf = 1.5 Ω max) Low operation current. Extremely small Flat Package (EFP) is suitable for surface mount design. Ordering Information Type No. HVL147 Laser Mark N Package Code EFP Pin Arrangement Cathode mark Mark 1 N 2 1. Cathode 2. Anode Rev.2.00 Oct 20, 2004 page 1 of 4 DataSheet 4 U .com www.DataSheet4U.
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