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HZU27L Datasheet

Silicon Epitaxial Planar Zener Diode

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HZU-L Series
Silicon Epitaxial Planar Zener Diode for Low Noise Application
REJ03G0043-0300Z
Rev.3.00
Jul.28.2004
Features
Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series.
Low leakage and low zener impedance.
Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.
Ultra small Resin Package (URP) is suitable for surface mount design.
Ordering Information
Type No.
HZU-L Series
Laser Mark
Type No.
Package Code
URP
Pin Arrangement
Cathode mark
Mark
1 061 2
1. Cathode
2. Anode
Rev.3.00, Jul.28.2004, page 1 of 6


Renesas Electronics Components Datasheet

HZU27L Datasheet

Silicon Epitaxial Planar Zener Diode

No Preview Available !

HZU-L Series
Absolute Maximum Ratings
Item
Power dissipation
Junction temperature
Storage temperature
Symbol
Pd
Tj
Tstg
Value
150
150
55 to +150
(Ta = 25°C)
Unit
mW
°C
°C
Electrical Characteristics
Zener Voltage
Reverse Current
Type
HZU6L
Grade
A1
VZ (V)*1
Min Max
5.2 5.5
Test
Condition
IZ (mA)
0.5
IR (µA)
Max
1
Test
Condition
VR (V)
2.0
A2 5.3 5.6
A3 5.4 5.7
B1 5.5 5.8
B2 5.6 5.9
B3 5.7 6.0
C1 5.8 6.1
C2 6.0 6.3
C3 6.1 6.4
HZU7L A1 6.3 6.6
0.5
1
3.5
A2 6.4 6.7
A3 6.6 6.9
B1 6.7 7.0
B2 6.9 7.2
B3 7.0 7.3
C1 7.2 7.6
C2 7.3 7.7
C3 7.5 7.9
HZU9L A1 7.7 8.1
0.5
1
6.0
A2 7.9 8.3
A3 8.1 8.5
B1 8.3 8.7
B2 8.5 8.9
B3 8.7 9.1
C1 8.9 9.3
C2 9.1 9.5
C3 9.3 9.7
HZU11L A1 9.5 9.9
0.5
1
8.0
A2 9.7 10.1
A3 9.9 10.3
B1 10.2 10.6
B2 10.4 10.8
B3 10.7 11.1
Notes: 1. Tested with DC.
2. C = 200 pF, R = 0 , Both forward and reverse direction 1 pulse.
Failure criterion ; According to IR spec.
Dynamic Resistance
Test
rd () Condition
Max
IZ (mA)
150 0.5
80 0.5
60 0.5
60 0.5
60 0.5
80 0.5
(Ta = 25°C)
ESD-Capability
(V) *2
Min
200
200
200
200
Rev.3.00, Jul.28.2004, page 2 of 6


Part Number HZU27L
Description Silicon Epitaxial Planar Zener Diode
Maker Renesas Technology
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