R1LV1616RSD-7SI Datasheet PDF (16Mb superSRAM) | Download Renesas Technology R1LV1616RSD-7SI

R1LV1616RSD-7SI - 16Mb superSRAM

Description

The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

Features

Single 2.7-3.6V power supply.
Small stand-by current:4µA (3.0V, typ. ).
Smaller stand-by current by "Data retention mode"(“CS2"='L') : 1µA (3.0V, typ. ).
Data retention supply voltage =2.0V.
No clocks, No refresh.
All inputs and outputs are TTL compatible.
Easy memory expansion by CS1#, CS2, LB# and UB#.
Common Data I/O.
Three-state outputs: OR-tie capability.
OE# prevents data contention on the I/O bus.

Datasheet Details

Part number	R1LV1616RSD-7SI
Manufacturer	Renesas Technology
File Size	441.01 KB
Description	16Mb superSRAM
Datasheet	R1LV1616RSD-7SI Datasheet
Additional preview pages of the R1LV1616RSD-7SI datasheet.

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Full PDF Text Transcription

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Preliminary R1LV1616R Series 16Mb superSRAM (1M wordx16bit) This product is under development and its specification might be changed without any notice. REJ03C0101-0002Z Rev.0.02 2003.10.24 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. The R1LV1616R Series is suitable for memory applications where a simple interfacing , battery operating and battery backup are the important design objectives. The R1LV1616R Series is packaged in a 52pin micro thin small outline mount device[µTSOP / 10.79mm x 10.49mm with the pin-pitch of 0.4mm] or a 48balls fine pitch ball grid array [f-BGA / 7.5mmx8.5mm with the ball-pitch of 0.75mm and 6x8 array] .

Published: Nov 7, 2014 |