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Renesas Electronics Components Datasheet

RJH60C9DPD Datasheet

Silicon N Channel IGBT

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RJH60C9DPD
Silicon N Channel IGBT
Application: Inverter
Features
High breakdown-voltage
Low on-voltage
Built-in diode
Preliminary
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REJ03G1838-0100
Rev.1.00
Oct 14, 2009
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
C
4
123
1. Gate
2. Collector
G 3. Emitter
4. Collecotor
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW 10 μs, duty cycle 1%
2. Value at Tc = 25°C
Symbol
VCES / VR
VGES
IC
IC
Ic(peak) Note1
iDF
iDF(peak) Note1
PC Note2
θj-c Note2
Tj
Tstg
Ratings
600
±30
10
5
20
5
20
45
2.78
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/ W
°C
°C
REJ03G1838-0100 Rev.1.00 Oct 14, 2009
Page 1 of 3


Renesas Electronics Components Datasheet

RJH60C9DPD Datasheet

Silicon N Channel IGBT

No Preview Available !

RJH60C9DPD
Electrical Characteristics
Item
Zero gate voltage collector current
/ diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Symbol
ICES / IR
IGES
VGE(off)
VCE(sat)
VCE(sat)
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Switching time
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Min
4.0
Preliminary
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(Ta = 25°C)
Typ Max Unit
Test Conditions
— 1.0 μA VCE = 600 V, VGE = 0V
— ±100
6.0 8.0
1.9 2.5
2.0
180 —
19 —
7—
8.0 —
5.0 —
2.5 —
25 —
50 —
40 —
250 —
nA VGE = ±30 V, VCE = 0V
V VCE = 10 V, IC = 1 mA
V Tc = 25°C
IC = 5 A, VGE = 15 V Note3
V Tc = 100°C
IC = 5 A, VGE = 15 V Note3
pF VCE = 25 V
pF VGE = 0V
pF f = 1 MHz
nC VGE = 15 V
nC VCE = 300 V
nC IC = 5 A
ns IC = 5 A
ns RL = 37.5 Ω
ns VGE = 15 V
ns Rg = 5 Ω
FRD Forward voltage
FRD reverse recovery time
Notes: 3. Pulse test.
4. Under development.
VF — 1.8 2.3 V IF = 5 A Note3
trr — 100 — ns IF = 5 A, diF/dt = 100 A/μs
—The specifications potentially be changed without notice.
REJ03G1838-0100 Rev.1.00 Oct 14, 2009
Page 2 of 3


Part Number RJH60C9DPD
Description Silicon N Channel IGBT
Maker Renesas Technology
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