RJH60C9DPD - Silicon N Channel IGBT

Features

High breakdown-voltage.
Low on-voltage.
Built-in diode.

Renesas Technology

Datasheet Details

Part number	RJH60C9DPD
Manufacturer	Renesas Technology
File Size	191.55 KB
Description	Silicon N Channel IGBT
Datasheet	RJH60C9DPD Datasheet
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Full PDF Text Transcription

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RJH60C9DPD Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) C 4 www.DataSheet4U.com Preliminary REJ03G1838-0100 Rev.1.00 Oct 14, 2009 G 1 2 1. Gate 2. Collector 3. Emitter 4. Collecotor E 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2.

Published: Feb 18, 2010 |