RJH60D1DPE igbt equivalent, silicon n channel igbt.
* High breakdown-voltage
* Low on-voltage
* Built-in diode
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Preliminary
REJ03G1840-0100 Rev.1.00 Oct 14, 2009
Outline
RENESAS Package c.
such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the .
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