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RJH60D2DPE - Silicon N Channel IGBT

Features

  • High breakdown-voltage.
  • Low on-voltage.
  • Built-in diode www. DataSheet4U. com Preliminary REJ03G1842-0100 Rev.1.00 Oct 14, 2009 Outline.

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Datasheet Details

Part number RJH60D2DPE
Manufacturer Renesas Technology
File Size 187.90 KB
Description Silicon N Channel IGBT
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RJH60D2DPE Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode www.DataSheet4U.com Preliminary REJ03G1842-0100 Rev.1.00 Oct 14, 2009 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) C 4 G 1 2 3 E 1. Gate 2. Collector 3. Emitter 4. Collecotor Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2.
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