RJK0303DPB switching equivalent, silicon n channel power mos fet power switching.
*
*
*
*
* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.1 mΩ typ. (at VGS = 1.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 157.59KB)