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RJK0366DSP
Silicon N Channel Power MOS FET Power Switching
REJ03G1657-0301 Rev.3.01 Apr 24, 2008
Features
Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.0 mΩ typ. (at VGS = 10 V) • Pb-free • • • •
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8)
5 76 34
5 6 7 8 D D D D
8
12
4 G
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S S S 1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) IDR
Note1
Ratings 30 ±20 11 88 11 11 12.
RJK0366DSP Datasheet
