RJK5012DPE Key Features
- Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C)
- Low leakage current
- High speed switching REJ03G1487-0300 Rev.3.00 May 12, 2010
- Part: RJK5012DPE
- Description: Silicon N Channel MOS FET High Speed Power Switching
- Manufacturer: Renesas
- Size: 109.94 KB
Other RJK5012DPE Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Renesas |
RJK5012DPP-A0 | MOSFET |
|
Renesas |
RJK5012DPP-E0 | MOS FET |