RJK5012DPP-E0 Overview
Preliminary Datasheet RJK5012DPP-E0 500V - 12A - MOS FET High Speed Power Switching.
RJK5012DPP-E0 Key Features
- Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)
- Low leakage current
- High speed switching R07DS0561EJ0100 Rev.1.00 Jun 21, 2012