RJK5026DPP-E0 Description
Preliminary Datasheet RJK5026DPP-E0 500V - 6A - MOS FET High Speed Power Switching.
RJK5026DPP-E0 Key Features
- Low on-resistance RDS(on) = 1.35 typ. (at ID = 3 A, VGS = 10 V, Ta = 25C)
- Low leakage current
- High speed switching R07DS0608EJ0100 Rev.1.00 Jun 21, 2012