• Part: RJK5026DPE
  • Description: Silicon N Channel MOS FET High Speed Power Switching
  • Manufacturer: Renesas
  • Size: 100.81 KB
Download RJK5026DPE Datasheet PDF
Renesas
RJK5026DPE
Features - Low on-resistance - Low leakage current - High speed switching REJ03G1852-0100 Rev.1.00 Oct 26, 2009 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source 4. Drain G 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) IDR Note1 IDR (pulse) Note3 IAP Note3 EAR Pch Note2 θch-c Tch Tstg Note1 Ratings 500 ±30 6 18 6 18 4 0.88 62.5 2 150 - 55 to +150 Unit V V A A A A A m J W °C/W °C °C REJ03G1852-0100 Rev.1.00 Oct 26, 2009 Page 1 of 1 .. Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown...