• Part: RJK5020DPK
  • Description: Silicon N Channel MOS FET High Speed Power Switching
  • Manufacturer: Renesas
  • Size: 132.64 KB
Download RJK5020DPK Datasheet PDF
Renesas
RJK5020DPK
Features - Low on-resistance - Low leakage current - High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1. Gate 2. Drain (Flange) 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 500 ±30 40 120 40 120 12.5 8.6 200 0.625 150 - 55 to +150 Unit V V A A A A A m J W °C/W °C °C Rev.2.00 Dec 19, 2006 page 1 of 6 .. Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak...