• Part: RJK5026DPP
  • Description: Silicon N Channel MOS FET High Speed Power Switching
  • Manufacturer: Renesas
  • Size: 96.86 KB
Download RJK5026DPP Datasheet PDF
Renesas
RJK5026DPP
Features - Low on-resistance - Low leakage current - High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) 1. Gate 2. Drain 3. Source 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4. PW ≤ 10 µs, duty cycle ≤ 1% Value at Tc = 25°C STch = 25°C, Tch ≤ 150°C Limited by maximum safe operation area Symbol VDSS VGSS IDNote4 ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 500 ±30 6 18 6 18 4 0.88 28.5 4.38 150 - 55 to +150 Unit V V A A A A A m J W °C/W °C °C REJ03G1734-0100 Rev.1.00 Sep 11, 2008 Page 1 of 3 .. Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage...