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RJK5030DPP-M0 - High Speed Power Switching

General Description

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Key Features

  • Low on-state resistance RDS(on) = 1.3  typ. (at ID = 2 A, VGS = 10 V, Ta = 25C).
  • High speed switching R07DS0227EJ0100 Rev.1.00 Dec 14, 2010 Outline.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Datasheet RJK5030DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 1.3  typ. (at ID = 2 A, VGS = 10 V, Ta = 25C)  High speed switching R07DS0227EJ0100 Rev.1.00 Dec 14, 2010 Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D G 1. Gate 2. Drain 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. Value at Tc = 25C 3. STch = 25C, Tch  150C Symbol VDSS VGSS ID ID (pulse) Note3 IAP Pch Note 2 ch-c Tch Tstg Note1 Value 500 30 5 20 5 28.5 4.