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RJK5032DPD - MOS FET

General Description

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Key Features

  • Low on-state resistance RDS(on) = 2.1  typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C).
  • Low drive current.
  • High speed switching R07DS0836EJ0200 Rev.2.00 Aug 08, 2012 Outline.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Datasheet RJK5032DPD 500V - 3A - MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 2.1  typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C)  Low drive current  High speed switching R07DS0836EJ0200 Rev.2.00 Aug 08, 2012 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1. 2. 3. 4. S D G 12 3 Gate Drain Source Drain Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. STch = 25C, Tch  150C 3.