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RJK5031DPD - N-Channel Power MOSFET

General Description

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Key Features

  • Low on-state resistance RDS(on) = 2.4  typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C).
  • High speed switching R07DS0417EJ0200 Rev.2.00 Feb 24, 2012 Outline.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Datasheet RJK5031DPD Silicon N Channel MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 2.4  typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C)  High speed switching R07DS0417EJ0200 Rev.2.00 Feb 24, 2012 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings www.DataSheet.co.kr (Ta = 25C) Value 500 30 3 12 3 40.3 3.1 150 –55 to +150 Unit V V A A A W C/W C C Item Drain to source voltage Gate to source voltage Drain current Drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. Value at Tc = 25C 3.