RJK5031DPD Description
Preliminary Datasheet RJK5031DPD Silicon N Channel MOS FET High Speed Power Switching.
RJK5031DPD Key Features
- Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C)
- High speed switching R07DS0417EJ0200 Rev.2.00 Feb 24, 2012