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RJK5033DPD - N-Channel Power MOSFET

General Description

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Key Features

  • Low on-state resistance RDS(on) = 0.96  typ. (ID = 3 A, VGS = 10 V, Ta = 25C).
  • High speed switching R07DS0179EJ0100 Rev.1.00 Oct 05, 2010 Outline.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Datasheet RJK5033DPD Silicon N Channel MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 0.96  typ. (ID = 3 A, VGS = 10 V, Ta = 25C)  High speed switching R07DS0179EJ0100 Rev.1.00 Oct 05, 2010 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings www.DataSheet.co.kr (Ta = 25C) Value 500 30 6 24 6 65 1.92 150 –55 to +150 Unit V V A A A W C/W C C Item Drain to source voltage Gate to source voltage Drain current Drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. Value at Tc = 25C 3.