RJK5033DPD Description
Preliminary Datasheet RJK5033DPD Silicon N Channel MOS FET High Speed Power Switching.
RJK5033DPD Key Features
- Low on-state resistance RDS(on) = 0.96 typ. (ID = 3 A, VGS = 10 V, Ta = 25C)
- High speed switching R07DS0179EJ0100 Rev.1.00 Oct 05, 2010