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RJK5032DPH-E0 - High Speed Power Switching

General Description

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Key Features

  • Low on-state resistance RDS(on) = 2.1  typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C).
  • Low drive current.
  • High speed switching R07DS1039EJ0100 Rev.1.00 Mar 15, 2013 Outline.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Datasheet RJK5032DPH-E0 500V - 3A - MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 2.1  typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C)  Low drive current  High speed switching R07DS1039EJ0100 Rev.1.00 Mar 15, 2013 Outline RENESAS Package code: PRSS0004ZJ-B (Package name: TO-251) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. STch = 25C, Tch  150C 3.