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RJK5030DPD - Silicon N Channel MOS FET High Speed Power Switching

Description

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Features

  • Low on-state resistance RDS(on) = 1.3  typ. (at ID = 2 A, VGS = 10 V, Ta = 25C).
  • High speed switching REJ03G1913-0100 Rev.1.00 Apr 12, 2010 Outline.

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Datasheet Details

Part number RJK5030DPD
Manufacturer Renesas Electronics
File Size 94.44 KB
Description Silicon N Channel MOS FET High Speed Power Switching
Datasheet download datasheet RJK5030DPD Datasheet
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Preliminary www.DataSheet4U.com Datasheet RJK5030DPD Silicon N Channel MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 1.3  typ. (at ID = 2 A, VGS = 10 V, Ta = 25C)  High speed switching REJ03G1913-0100 Rev.1.00 Apr 12, 2010 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. Value at Tc = 25C 3.
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